IPP041N04N G

IPP041N04N G Type IPB041N04N G ™ !"#$%!& 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS(on),max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB041N04N G IPP041N04N G Package PG-TO263-3 PG-TO220-3 Marking 041N04N 041N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 80 V GS=10 V, T C=100 °C 80 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche current, single pulse3) I AS T C=25 °C 80 Avalanche energy, single pulse E AS I D=80 A, R GS=25 W 60 mJ Gate source voltage V GS ±20 V 1) Rev. 1.2 J-STD20 and JESD22 page 1 2009-12-17 IPP041N04N G IPB041N04N G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 94 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm² cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=45 µA 2 - 4 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=40 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance5) R DS(on) V GS=10 V, I D=80 A - 3.3 4.1 mW Gate resistance RG - 1.6 - W Transconductance g fs 50 100 - S 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=80 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Rev. 1.2 Measured from drain tab to source pin page 2 2009-12-17 IPP041N04N G IPB041N04N G Parameter Values Symbol Conditions Unit min. typ. max. - 3400 4500 - 980 1300 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 36 - Turn-on delay time t d(on) - 16 - Rise time tr - 3.8 - Turn-off delay time t d(off) - 23 - Fall time tf - 4.8 - Gate to source charge Q gs - 18 - Gate charge at threshold Q g(th) - 10.3 - Gate to drain charge Q gd - 5.3 - Switching charge Q sw - 12.5 - Gate charge total Qg - 42 56 Gate plateau voltage V plateau - 5.1 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 40 - nC Output charge Q oss V DD=20 V, V GS=0 V - 41 - - - 78 - - 400 V GS=0 V, V DS=20 V, f =1 MHz V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics6) V DD=20 V, I D=30 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.96 1.2 Reverse recovery charge Q rr V R=20 V, I F=I S, di F/dt =400 A/µs - 46 - 6) Rev. 1.2 V nC See figure 16 for gate charge parameter definition page 3 2009-12-17 IPP041N04N G IPB041N04N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS!10 V 100 80 80 60 60 I D [A] P tot [W] 100 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 10 2 100 µs 100 Z thJC [K/W] I D [A] DC 1 ms 10 1 10 ms 0.5 0.2 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-12-17 IPP041N04N G IPB041N04N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 8 10 V 5.5 V 7 250 6V 7V 6.5 V 6 R DS(on) [mW ] I D [A] 200 6.5 V 150 5 7V 4 10 V 3 6V 100 2 5.5 V 50 1 5V 0 0 0 1 2 3 0 40 80 V DS [V] 120 160 200 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 120 250 100 200 80 g fs [S] I D [A] parameter: T j 150 100 60 40 50 20 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 1.2 0 20 40 60 I D [A] V GS [V] page 5 2009-12-17 IPP041N04N G IPB041N04N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 mA 8 4 7 3 5 98 % V GS(th) [V] R DS(on) [mW W] 6 4 typ 2 3 2 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C, 98% Ciss Coss 103 175 °C, 98% 100 I F [A] C [pF] 25 °C 175 °C 102 10 Crss 101 1 0 10 20 30 40 Rev. 1.2 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2009-12-17 IPP041N04N G IPB041N04N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 20 V 10 25 °C 8V 32 V 100 °C 8 V GS [V] I AV [A] 150 °C 10 6 4 2 1 0 10-1 100 101 102 103 0 10 t AV [µs] 20 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g (th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2009-12-17 IPP041N04N G IPB041N04N G Package Outline Footprint: Rev. 1.2 PG-TO220-3-1 Packaging: page 8 2009-12-17 IPP041N04N G IPB041N04N G Package Outline Rev. 1.2 PG-TO263-3 page 9 2009-12-17 IPP041N04N G IPB041N04N G                                        ! 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